A reproducible ohmic contact to n-type GaAs0.6P0.4
- 31 May 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (5) , 501-505
- https://doi.org/10.1016/0038-1101(79)90156-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Behaviour of gold in the vicinity of the interface during annealingThin Solid Films, 1978
- Investigation of the AuGeNi system used for alloyed contacts to GaAsSolid-State Electronics, 1977
- Thin-phase epitaxy for good semiconductor metal ohmic contactsIEEE Transactions on Electron Devices, 1975
- Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAsSolid-State Electronics, 1975
- New method for producing ideal metal-semiconductor ohmic contactsElectronics Letters, 1974
- Contact resistances of AuGeNi, AuZn and Al to III–V compoundsSolid-State Electronics, 1972
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967
- Metal-semiconductor contacts for GaAs bulk effect devicesSolid-State Electronics, 1967