RESURF AlGaN/GaN HEMT for high voltage power switching
- 1 August 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 22 (8) , 373-375
- https://doi.org/10.1109/55.936347
Abstract
A novel HEMT configuration based on the RESURF technique is proposed for very high voltage power switching applications. It employs a p-n junction below the 2-DEG channel and two field plates, one extending from the gate and the other from the drain, to distribute the electric field over the gate to drain separation. 2-D simulations indicate a breakdown voltage >1 KV at on-resistance of /spl sim/1 m/spl Omega//spl middot/cm/sup 2/ (neglecting contact resistances) for the device.Keywords
This publication has 10 references indexed in Scilit:
- A review of RESURF technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plateIEEE Transactions on Electron Devices, 2001
- High breakdown voltage GaN HFET with field plateElectronics Letters, 2001
- 7.5 kW/mm 2 current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substratesElectronics Letters, 2000
- High breakdown GaN HEMT with overlapping gate structureIEEE Electron Device Letters, 2000
- Experimental evaluation of impact ionization coefficients in GaNIEEE Electron Device Letters, 1999
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999
- AlGaN-GaN heterostructure FETs with offset gatedesignElectronics Letters, 1997
- Trends in power semiconductor devicesIEEE Transactions on Electron Devices, 1996
- High voltage thin layer devices (RESURF devices)Published by Institute of Electrical and Electronics Engineers (IEEE) ,1979