Epitaxial nucleation and growth kinetics of indium phosphide in an InPH3HClH2 system
- 1 September 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 163, 437-441
- https://doi.org/10.1016/0040-6090(88)90461-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Epitaxial nucleation and growth kinetics of gallium arsenide in a chloride transport systemSemiconductor Science and Technology, 1987
- Heterogeneous nucleation and growth of polycrystalline siliconBulletin of Materials Science, 1985
- Vapour phase growth of InP from the In-PH3-HCl-H2 systemJournal of Crystal Growth, 1984
- Variation of interfacial tension with the number of molecules in the critical two-dimensional nucleusJournal of Physics D: Applied Physics, 1982
- Indium phosphide vapor phase epitaxy: A reviewJournal of Crystal Growth, 1981
- Kinetics of the vapour phase deposition of epitaxial InPJournal of Electronic Materials, 1980
- Initial Stage of Epitaxial Growth in Thin FilmsCrystal Research and Technology, 1969