Vapour phase growth of InP from the In-PH3-HCl-H2 system
- 1 January 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 66 (1) , 73-82
- https://doi.org/10.1016/0022-0248(84)90078-2
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Vapor-phase epitaxy of GaInAsP and InPJournal of Crystal Growth, 1981
- Indium phosphide vapor phase epitaxy: A reviewJournal of Crystal Growth, 1981
- Chemical Etching Characteristics of ( 001 ) InPJournal of the Electrochemical Society, 1981
- Vapor phase epitaxial growth of InP on liquid phase epitaxial In0.53Ga0.47AsJournal of Crystal Growth, 1981
- Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy techniqueProgress in Crystal Growth and Characterization, 1979
- Vapour phase epitaxy of InP: Growth kinetics and controlled dopingJournal of Crystal Growth, 1979
- Epitaxial GaAs Kinetic Studies: {001} OrientationJournal of the Electrochemical Society, 1970
- Epitaxial Growth of Indium Phosphide in an Open Flow SystemJapanese Journal of Applied Physics, 1969
- The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1969
- Die thermodynamischen daten und dampfdrucke der wichtigsten III-V-VerbindungenSolid-State Electronics, 1960