The influence of the interface states on the dynamic transconductance of mis-fets
- 31 August 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (8) , 671-674
- https://doi.org/10.1016/0038-1101(77)90042-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Noise and y-parameters in mos fet'sSolid-State Electronics, 1971
- Equivalent circuit models in semiconductor transport for thermal, optical, auger-impact, and tunnelling recombination–generation–trapping processesPhysica Status Solidi (a), 1971
- Small-signal high-frequency response of the insulated-gate field-effect transistorIEEE Transactions on Electron Devices, 1970
- FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURESApplied Physics Letters, 1966
- Gallium arsenide MOS transistorsSolid-State Electronics, 1965