Model for conductance in dry-etch damaged n-GaAs structures
- 9 November 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (19) , 2335-2337
- https://doi.org/10.1063/1.108235
Abstract
A model for the effects of dry‐etch damage on the conductances of etched structures is developed. Expressions for defect distribution are obtained for top‐surface and sidewall damage. The expression for sidewall damage is used in the calculation of wire conductances. The model accounts accurately for changes in experimentally measured conductances of SiCl4‐etched n+‐GaAs wires with variations in material carrier concentration, epilayer thickness, and etch time/depth. The analysis indicates that defects are created at a significant rate at sidewalls as compared to top surfaces.Keywords
This publication has 11 references indexed in Scilit:
- Image potentials and the dry etching of submicron trenches with low-energy ionsApplied Physics Letters, 1991
- Study of electrical damage in GaAs induced by SiCl4 reactive ion etchingJournal of Applied Physics, 1991
- Formation of Highly Mobile Defects in GaAs Under Ar-Plasma EtchingPhysica Status Solidi (a), 1990
- The influence of substrate topography on ion bombardment in plasma etchingJournal of Applied Physics, 1990
- Surface contamination and damage from CF4 and SF6 reactive ion etching of silicon oxide on gallium arsenideJournal of Electronic Materials, 1990
- Characterization of subsurface damage in GaAs processed by Ga+ focused ion-beam-assisted Cl2 etching using photoluminescenceJournal of Applied Physics, 1989
- Dry etch induced damage in GaAs investigated using Raman scattering spectroscopyJournal of Vacuum Science & Technology B, 1989
- Ultrasmall device fabrication using dry etching of gaasMicroelectronic Engineering, 1986
- Effects of dry etching on GaAsJournal of Vacuum Science & Technology B, 1983
- The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodesSolid-State Electronics, 1976