High quality GexSi1-x by heteroepitaxial lateral overgrowth
- 17 August 1992
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 121 (4) , 790-794
- https://doi.org/10.1016/0022-0248(92)90587-9
Abstract
No abstract availableKeywords
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