Model for defect-free epitaxial lateral overgrowth of Si over SiO2 by liquid phase epitaxy
- 1 April 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 110 (4) , 823-834
- https://doi.org/10.1016/0022-0248(91)90640-q
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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