Defect-free epitaxial lateral overgrowth of oxidized (111) Si by liquid phase epitaxy
- 23 July 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (4) , 351-353
- https://doi.org/10.1063/1.103689
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Epitaxial Lateral Overgrowth of Si by LPE with Sn Solution and Its Orientation DependenceJapanese Journal of Applied Physics, 1989
- Model for facet and sidewall defect formation during selective epitaxial growth of (001) siliconApplied Physics Letters, 1988
- Silicon Layers Grown on Patterned Substrates by Liquid Phase EpitaxyMRS Proceedings, 1985
- SOI by CVD: Epitaxial Lateral Overgrowth (ELO) process—ReviewJournal of Crystal Growth, 1983
- A New Preferential Etch for Defects in Silicon CrystalsJournal of the Electrochemical Society, 1977
- Substrate orientation and surface morphology of GaAs liquid phase epitaxial layersJournal of Crystal Growth, 1974
- Substrate orientation and surface morphology of GaAs liquid phase epitaxial layersJournal of Crystal Growth, 1974