Atomic motion of dopant during interfacial silicide formation
- 1 June 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 104 (1-2) , 191-195
- https://doi.org/10.1016/0040-6090(83)90561-8
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Redistribution of As during Pd2Si formation: Ion channeling measurementsJournal of Applied Physics, 1982
- Redistribution of implanted phosphorus after platinum silicide formation and the characteristics of Schottky barrier diodesJournal of Applied Physics, 1982
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- Ion-implanted low-barrier PtSi Schottky-barrier diodesIEEE Transactions on Electron Devices, 1980
- The redistribution of implanted dopants after metal-silicide formationJournal of Applied Physics, 1978