Rutherford backscattering and luminescence characteristics of neodymium implanted GaP, GaAs, and AlGaAs
- 1 February 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (3) , 1300-1303
- https://doi.org/10.1063/1.347264
Abstract
GaP, GaAs, and Al0.25Ga0.75As samples implanted with neodymium were characterized by Rutherford backscattering spectroscopy and by photoluminescence. It is shown that recrystallization of room-temperature-implanted GaP and GaAs is retarded by the presence of Nd. However, the intra-4f shell luminescence spectra of Nd are independent of the crystalline state of GaAs. This suggests that local bonding of Nd to host lattice atoms is the basic factor determining the optical properties of Nd in GaAs. It is also shown that recrystallization of AlGaAs is only weakly affected by the presence of Nd in the layers. This shows AlGaAs:Nd to be a very promising material for optoelectronic applications.This publication has 17 references indexed in Scilit:
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