Studies of the Si/SiO2 interface by angular dependent X-ray photoelectron spectroscopy
- 16 December 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 68 (2) , 505-517
- https://doi.org/10.1002/pssa.2210680221
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Chemical bond and related properties of SiO2. VII. Structure and electronic properties of the SiOx region of Si–SiO2 interfacesPhysica Status Solidi (a), 1980
- Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown OxideJournal of the Electrochemical Society, 1980
- CHEMICAL BONDING IN SiOPublished by Elsevier ,1980
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979
- Auger analysis of ultrathin SiO2 layers on siliconJournal of Applied Physics, 1979
- CHEMICAL STRUCTURE OF THE TRANSITIONAL REGION OF THE SiO2/Si INTERFACEPublished by Elsevier ,1978
- Abstract: Stoichiometry of SiO2/Si interfacial regions. I. Ultrathin oxide filmsJournal of Vacuum Science and Technology, 1976
- X-ray photoelectron spectroscopy of thermally grown silicon dioxide films on siliconChemical Physics Letters, 1975
- An analysis of the radial distribution function of SIOxJournal of Non-Crystalline Solids, 1975
- Optical properties of non-crystalline Si, SiO, SiOx and SiO2Journal of Physics and Chemistry of Solids, 1971