Physical basis of scattering potential at grain boundary of polycrystalline semiconductors
- 1 January 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (1) , 49-51
- https://doi.org/10.1063/1.92914
Abstract
A physical theory using a charge scattering model is proposed to interpret the experimental data of grain boundary transport in polycrystalline semiconductors. The calculated result explains the need of an attenuation factor as an added coefficient in the thermionic emission current.Keywords
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