Copper drift in low-K polymer dielectrics for ULSI metallization
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper reports the drift of Cu ions in various low-permittivity polymer dielectrics to identify Cu barrier requirements for future ULSI integration. Bias-temperature stressing was conducted on Cu-insulator-semiconductor capacitors to investigate Cu+ penetration into the polymers. Our study shows that Cu/sup +/ ions drift readily into poly(arylene ether) and fluorinated polyimide, but much more slowly into benzocyclobutene. A thin nitride cap layer can stop the drift. A physical model has been developed to explain the kinetics of Cu/sup +/ drift.Keywords
This publication has 2 references indexed in Scilit:
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- Kinetics of copper drift in PECVD dielectricsIEEE Electron Device Letters, 1996