Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experiment
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (10) , 2260-2266
- https://doi.org/10.1109/16.40908
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- New transverse-domain formation mechanism in a quarter-micrometre-gate HEMTElectronics Letters, 1988
- Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETsIEEE Transactions on Electron Devices, 1988
- Performance of a quarter-micrometer-gate ballistic electron HEMTIEEE Electron Device Letters, 1987
- Buried p-layer SAINT for very high-speed GaAs LSI's with submicrometer gate lengthIEEE Transactions on Electron Devices, 1985
- Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductorsIEEE Transactions on Electron Devices, 1985
- Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulationIEEE Electron Device Letters, 1985
- Principles of operation of short-channel gallium arsenide field-effect transistor determined by Monte Carlo methodIEEE Transactions on Electron Devices, 1984
- Importance of electron scattering with coupled plasmon-optical phonon modes in GaAs planar-doped barrier transistorsIEEE Electron Device Letters, 1983
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970