Impact of technology parameters on device performance of UTB-SOI CMOS
- 30 April 2004
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 48 (4) , 521-527
- https://doi.org/10.1016/j.sse.2003.09.021
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- An adjustable work function technology using Mo gate for CMOS devicesIEEE Electron Device Letters, 2002
- Impact of technology parameters on inverter delay of UTB-SOI CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Perspectives of fully-depleted SOI transistors down to 20nm gate lengthPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Ultrathin-body SOI MOSFET for deep-sub-tenth micron eraIEEE Electron Device Letters, 2000