Effect of Oxygen Doping into SiBN Ternary Film

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Abstract
Oxygen-doped SiBN films are proposed. The effect of oxygen doping is discussed by considering the bonding configuration of oxygen atoms in SiBN films evaluated using infrared absorption spectroscopy and X-ray photoelectron spectroscopy. While SiBN film is characterized as a material with a low dielectric constant, a lower dielectric constant is obtained by oxygen doping into SiBN film in the [O]/2[Si]1 region, the dielectric constant of films increases because oxygen atoms combine with B atoms and polar B-O bonds are formed in the film. The breakdown strength of oxygen-doped SiBN films becomes higher with a decrease in the films' dielectric constant.