Surface preparation for Schottky metal - 4H-SiC contacts formed on plasma-etched SiC
- 15 November 2000
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 15 (12) , 1107-1114
- https://doi.org/10.1088/0268-1242/15/12/302
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodesJournal of Electronic Materials, 1998
- Evaluation of damage induced by inductively coupled plasma etching of 6H–SiC using Au Schottky barrier diodesApplied Physics Letters, 1998
- Schottky contacts on CF4/H2 reactive ion etched β-SiCSolid-State Electronics, 1998
- Surface Morphology Improvement of SiC Epitaxy by Sacrificial OxidationMaterials Science Forum, 1998
- Chapter 3 Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n JunctionsPublished by Elsevier ,1998
- A Review of SiC Reactive Ion Etching in Fluorinated PlasmasPhysica Status Solidi (b), 1997
- Surface Studies on SiC as Related to ContactsPhysica Status Solidi (b), 1997
- Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A reviewSolid-State Electronics, 1996
- Low damage and residue-free dry etching of 6H–SiC using electron cyclotron resonance plasmaApplied Physics Letters, 1995
- Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H-SiC: Crystal face dependenceApplied Physics Letters, 1993