Schottky contacts on CF4/H2 reactive ion etched β-SiC
- 1 March 1998
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (2) , 253-256
- https://doi.org/10.1016/s0038-1101(97)00224-4
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Characterization of the buffer layer in SiC heteroepitaxyApplied Surface Science, 1993
- Metal Schottky barrier contacts to alpha 6H-SiCJournal of Applied Physics, 1992
- Silicon-carbide high-voltage (400 V) Schottky barrier diodesIEEE Electron Device Letters, 1992
- Recent developments in SiC single-crystal electronicsSemiconductor Science and Technology, 1992
- Pt and PtSix Schottky contacts on n-type β-SiCJournal of Applied Physics, 1989
- Reactive Ion Etching for SiC Device FabricationPublished by Springer Nature ,1989
- The effect of heat treatment on Au Schottky contacts on β-SiCIEEE Transactions on Electron Devices, 1987
- Infrared reflectance evaluation of chemically vapor deposited β-SiC films grown on Si substratesJournal of Applied Physics, 1986
- Thermal oxidation of 3C silicon carbide single-crystal layers on siliconApplied Physics Letters, 1984
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965