Monolithic pin -HEMT 1.55 µm photoreceiveron InP with 27 GHz bandwidth
- 7 November 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (23) , 2142-2143
- https://doi.org/10.1049/el:19961421
Abstract
A monolithically integrated photoreceiver is presented, based on a new integration concept comprising a waveguide integrated photodiode and a travelling wave GaInAs/AlInAs-HEMT amplifier. A record 3 dB bandwidth of 27 GHz is measured and a clearly open eye is obtained for a 20 Gbit/s pseudo-random bit stream. This high speed performance was achieved with photolithographically defined 0.7 µm gate length HEMTs, regrown by MBE on semi-insulating GaInAsP waveguide layers.Keywords
This publication has 4 references indexed in Scilit:
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- 18.5-GHz bandwidth monolithic MSM/MODFET photoreceiver for 1.55-μm wavelength communication systemsIEEE Photonics Technology Letters, 1996
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