High speed, monolithically integrated pin -HEMTphotoreceiver fabricated on InPwith 18 GHz bandwidth
- 12 October 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (21) , 1831-1833
- https://doi.org/10.1049/el:19951273
Abstract
An integrated photoreceiver using a pin photodiode and GaInAs/AlInAs HEMTs has been fabricated and characterised. The circuitry consists of a high input impedance front-end followed by an equalising second stage to compensate for the input capacitance. A bandwidth of 18 GHz was achieved which is, to the authors' knowledge, the highest reported bandwidth for an integrated photoreceiver on InP.Keywords
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