Two-dimensional impurity profiling with emission computed tomography techniques
- 1 April 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 8 (4) , 323-335
- https://doi.org/10.1109/43.29587
Abstract
A technique for the determination of two-dimensional impurity profiles in silicon using methods for emission computed tomography is presented. Several one-dimensional impurity profiles obtained for different directions through the sample are used to reconstruct the two-dimensional profile. A simulation study of the experiment is described, and effects of various experimental and reconstruction parameters are discussed. Reconstructions of an area of 4 μm×4 μm from thirteen one-dimensional measurements, with a resolution of 1000 Å, are numerically possibleKeywords
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