Large-area microwave plasma etching of polyimide
- 14 July 1987
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 20 (7) , 844-850
- https://doi.org/10.1088/0022-3727/20/7/005
Abstract
The authors have investigated O2/CF4 plasma etching of DuPont Kapton 'H' polyimide film using a new large-area microwave plasma apparatus. Uniform etching of a 700 cm2 sample area is achieved by combined rotational and translational motion of the substrate holder with respect to the microwave applicator. They have investigated the effect of various operating parameters, namely, pressure, etchant gas composition and flow rate, discharge power, and substrate temperature. A sharp maximum in etch rate is observed at 0.2 Torr (27 Pa) and 12% CF4 in O2; the thermal activation energy is found to be Ea=0.21+or-0.02 eV. These data agree well with recent findings by other workers.Keywords
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