Cosmic ray soft error rates of 16-Mb DRAM memory chips
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 33 (2) , 246-252
- https://doi.org/10.1109/4.658626
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Portable Faraday cup for nonvacuum proton beamsIBM Journal of Research and Development, 1996
- Pion-Nucleus Total and Reaction Cross SectionsPublished by Springer Nature ,1995
- Pion Absorption in NucleiAnnual Review of Nuclear and Particle Science, 1986
- An experimental 4Mb CMOS DRAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Plate-noise analysis of an on-chip generated half-VDD biased-plate PMOS cell in CMOS DRAMsIEEE Journal of Solid-State Circuits, 1985
- The SPT cell—A new substrate-plate trench cell for DRAMsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Scaling consideration and dielectric breakdown improvement of corrugated capacitor cell (CCC) for future DRAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- A corrugated capacitor cell (CCC) for megabit dynamic MOS memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- True absorption and scattering of pions on nucleiPhysical Review C, 1981
- A 5-V Only 16-kbit Stacked-Capacitor MOS RAMIEEE Journal of Solid-State Circuits, 1980