A 5-V Only 16-kbit Stacked-Capacitor MOS RAM
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 15 (4) , 661-666
- https://doi.org/10.1109/JSSC.1980.1051452
Abstract
A novel one-transistor-type MOS RAM is discussed. This memory cell gives a remarkable area reduction and/or increase in storage capacitance by stacking the main portion of the storage capacitor on the address transistor, bit lines, or field oxides. It is callled a stacked-capacitor (STC) RAM. This STC memory has a three-level poly-Si structure. The stacked capacitor has poly-Si-Si/sub 3/N/sub 4/-poly-Si (or Al) structure. A 16-kbit STC RAM has been fabricated with 3-/spl mu/m technology and operated successfully. Memory performance is strikingly improved by using STC cells.Keywords
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