Characterizing the gate to source nonlinear capacitor role on FET IMD performance

27 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 3 (0149645X) , 1635-1638
https://doi.org/10.1109/mwsym.1998.700691

Abstract

This paper discusses the gate to source nonlinear capacitor contribution on small signal intermodulation distortion (IMD) performance of FET devices. The second and third order coefficients for the Cgs(Vgs) Taylor-series expansion, experimentally extracted with a simplified one-sided version of our previously proposed test set-up, are shown to be responsible for some detected differences on IMD behaviour at high frequencies.

Keywords

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