Hydrogen in Gallium Nitride Grown by MOCVD
- 1 January 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 159 (1) , 105-119
- https://doi.org/10.1002/1521-396x(199701)159:1<105::aid-pssa105>3.0.co;2-h
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Effect of hydrogen addition on the preferred orientation of AlN films prepared by reactive sputteringThin Solid Films, 1995
- The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substratesJournal of Crystal Growth, 1994
- Redistribution of Hydrogen in Gan, Ain, and InnMRS Proceedings, 1994
- Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1993
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and HydrazineJapanese Journal of Applied Physics, 1986
- Aluminum Nitride Epitaxially Grown on Silicon: Orientation RelationshipsJapanese Journal of Applied Physics, 1981
- Effect of Hydrogen Gas on c-Axis Oriented AlN Films Prepared by Reactive Magnetron SputteringJapanese Journal of Applied Physics, 1981