Effect of hydrogen addition on the preferred orientation of AlN films prepared by reactive sputtering
- 1 December 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 271 (1-2) , 50-55
- https://doi.org/10.1016/0040-6090(95)06901-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Morphology and orientation of nanocrystalline AlN thin filmsThin Solid Films, 1994
- Amorphous or nanocrystalline AlN thin films formed from AlN: HJournal of Materials Research, 1994
- Chemical stability of laminated AlN/AlN:H filmsThin Solid Films, 1994
- Preparation of c-Axis Oriented AlN Thin Films by Low-Temperature Reactive SputteringJapanese Journal of Applied Physics, 1992
- A comparison of NF3 and NH3 as the nitrogen sources for AIN crystal growth by metalorganic chemical vapor depositionThin Solid Films, 1991
- Stress dependence of reactively sputtered aluminum nitride thin films on sputtering parametersJournal of Vacuum Science & Technology A, 1989
- High-Energy Particles in AlN Film Preparation by Reactive Sputtering TechniqueJapanese Journal of Applied Physics, 1983
- Effect of Hydrogen Gas on c-Axis Oriented AlN Films Prepared by Reactive Magnetron SputteringJapanese Journal of Applied Physics, 1981
- Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1981
- Low-temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputteringApplied Physics Letters, 1980