A comparison of NF3 and NH3 as the nitrogen sources for AIN crystal growth by metalorganic chemical vapor deposition
- 1 September 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 204 (1) , 115-121
- https://doi.org/10.1016/0040-6090(91)90497-l
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- RF plasma synthesis of amorphous AIN powder and filmsAIChE Journal, 1990
- Low-Temperature Growth of Polycrystalline AlN Films by Microwave Plasma CVDJapanese Journal of Applied Physics, 1990
- Chemical Vapor Deposition of Insulating Films using Nitrogen TrifluorideJapanese Journal of Applied Physics, 1984
- Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1981
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971