Experimental Analysis of Concentration Profiles of Boron Implanted in Silicon
- 1 January 1973
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Technique for determining concentration profiles of boron impurities in substratesJournal of Applied Physics, 1972
- Heavy-ion range profiles and associated damage distributionsRadiation Effects, 1972
- Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single CrystalsJournal of Applied Physics, 1970
- Channeling study of boron implanted silicon: Liquid nitrogen temperature implantationRadiation Effects, 1970
- RADIATION-ENHANCED DIFFUSION OF BORON IN SILICONApplied Physics Letters, 1969
- Ion Bombardment of Silicon in a Glow DischargeJournal of Applied Physics, 1963
- Diffusion of Boron into SiliconJournal of Applied Physics, 1960
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960