n-CdS/p-Si heterojunction solar cells
- 15 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (6) , 569-572
- https://doi.org/10.1063/1.91787
Abstract
The photovoltaic properties of n‐CdS/p‐Si heterojunctions prepared by vacuum deposition of CdS:In on single‐crystal silicon substrates are reported. Power conversion efficiencies of 9.5% (cell area 1.5 cm2) have been obtained. The I‐V characteristics and their temperature dependance suggest tunneling as the dominant conduction mechanism.Keywords
This publication has 10 references indexed in Scilit:
- Spray-deposited high-efficiency SnO2/n-Si solar cellsApplied Physics Letters, 1979
- Efficient electron-beam-deposited ITO/n-Si solar cellsJournal of Applied Physics, 1979
- Angle-of-incidence effects in electron-beam-deposited SnO2/Si solar cellsApplied Physics Letters, 1979
- Electronic characterization of indium tin oxide/silicon photodiodesJournal of Applied Physics, 1978
- Efficient sprayed In2O3 : Sn n-type silicon heterojunction solar cellApplied Physics Letters, 1977
- High conductivity CdS films grown by a simple evaporation methodThin Solid Films, 1977
- Heterojunction solar cells of SnO2/SiJournal of Electronic Materials, 1977
- Efficient photovoltaic heterojunctions of indium tin oxides on siliconApplied Physics Letters, 1976
- Electrical and Photovoltaic Properties of CdS-Si JunctionsJapanese Journal of Applied Physics, 1970
- Photovoltaic Properties of CdS-p·Si Heterojunction CellsJapanese Journal of Applied Physics, 1967