Integration Challenges for Advanced Salicide Processes and their Impact on CMOS Device Performance
- 1 January 2000
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Self-aligned CoSi/sub 2/ for 0.18 μm and belowIEEE Transactions on Electron Devices, 1999
- A new leakage mechanism of Co salicide and optimized process conditions [for CMOS]IEEE Transactions on Electron Devices, 1999
- Optimization of Ti and Co Self-Aligned Silicide RTP for 0.10 μm CmosMRS Proceedings, 1998
- Control and Impact of Processing Ambient During Rapid Thermal SilicidationMRS Proceedings, 1998
- The Influence of Capping Layer Type on Cobalt Salicide Formation in Films and Narrow LinesMRS Proceedings, 1998
- In-Situ Oxygen Monitoring of Rapid Thermal Process Chamber: Diagnosis of Gas Flow Dynamics and Wafer ProcessingMRS Proceedings, 1997