New approach to the fabrication of CdSe/ZnSe quantum dots using a cleaved-edge overgrowth technique
- 2 February 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 184-185, 283-287
- https://doi.org/10.1016/s0022-0248(98)80060-2
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Optimization of ZnSe growth on the cleavage-induced GaAs (1 1 0) surface by molecular-beam epitaxyJournal of Crystal Growth, 1997
- Self-organized CdSe quantum dots onto cleaved GaAs (110) originating from Stranski–Krastanow growth modeApplied Physics Letters, 1997
- Naturally formed ZnCdSe quantum dots on ZnSe (110) surfacesApplied Physics Letters, 1997
- Formation of self-assembling CdSe quantum dots on ZnSe by molecular beam epitaxyApplied Physics Letters, 1996
- Near-field optical spectroscopy of localized excitons in strained CdSe quantum dotsPhysical Review B, 1996
- Photoluminescence Spectroscopy of Single CdSe Nanocrystallite Quantum DotsPhysical Review Letters, 1996
- Lateral quantization effects in lithographically defined CdZnSe/ZnSe quantum dots and quantum wiresApplied Physics Letters, 1995
- Scanning-tunneling-microscopy study of Ge/GaAs(110). I. Initial nucleation and growthPhysical Review B, 1992
- Growth of cubic (zinc blende) CdSe by molecular beam epitaxyApplied Physics Letters, 1989
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982