Numerical Derivative Analysis of the Pseudodielectric Functions of ZnTe
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12R) , 3907-3912
- https://doi.org/10.1143/jjap.31.3907
Abstract
The real (ε1) and imaginary (ε2) parts of the dielectric function of ZnTe have been measured by spectroscopic ellipsometry in the 1.5-5.6-eV photon-energy range at room temperature. The measured spectra reveal distinct structures at energies of the E 0, E 1, E 1+Δ1, and E 2 critical points (CPs). These data are analyzed by fitting the first-(dε/dE) or second-derivative spectrum (d2ε/dE 2) with model dielectric functions (MDF) or standard critical-point line shapes (SCP). It is found that both the MDF and SCP models successfully explain the measured derivative spectra. The MDF also shows excellent agreement with the experimental ε(ω) spectra, but the SCP does not. The CP energies determined here are: E 0=2.28 eV; E 1=3.78 eV; E 1+Δ1=4.34 eV; and E 2=5.23 eV. The E 1- and (E 1+Δ1)-exciton binding energies for ZnTe are also estimated to be ∼0.19 eV.Keywords
This publication has 42 references indexed in Scilit:
- Optical properties of ZnSePhysical Review B, 1991
- Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1−xAs, and In1−xGaxAsyP1−yJournal of Applied Physics, 1989
- Optical dispersion relations for Si and GeJournal of Applied Physics, 1989
- The dielectric function of AlSb from 1.4 to 5.8 eV determined by spectroscopic ellipsometryJournal of Applied Physics, 1989
- Optical spectra of SixGe1−x alloysJournal of Applied Physics, 1989
- Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSbPhysical Review B, 1987
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Dielectric function and surface microroughness measurements of InSb by spectroscopic ellipsometryJournal of Vacuum Science and Technology, 1980
- Evidence for a High Sensitivity ofResonant Absorption Structures on Energy-Band Behavior for CdTe and ZnTePhysical Review B, 1972
- Coulomb Effects at Saddle-Type Critical Points in CdTe, ZnTe, ZnSe, and HgTePhysical Review B, 1971