Si–C–H bonding in amorphous Si1−xCx:H film/substrate interfaces determined by real time infrared absorption during reactive magnetron sputter deposition
- 1 August 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (3) , 1659-1663
- https://doi.org/10.1063/1.360260
Abstract
We determine the evolution of Si–H and C–H bonding during the growth of hydrogenated amorphous silicon carbide films by reactive magnetron sputtering of a Si target in (Ar+H2+CH4). Si–H and C–H modes are observed by infrared reflectance spectroscopy. An optical cavity substrate is used to enhance the sensitivity. We identify Si–H stretching modes at 2110 and 2145 cm−1 due to Si–H clusters in microvoids and Si–H back‐bonded to carbon, respectively. C–H stretching modes are identified at 2870, 2900, and 2950 cm−1. These indicate dominant sp3 bonding configuration for C. During initial growth, a transition layer rich in H and C is observed. Steady state growth is not achieved until ≳250 Å on SiO2 substrates, and ∼70 Å on a‐Si:H substrates.This publication has 15 references indexed in Scilit:
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