Low-temperature electrical resistance and magnetoresistance of disordered Cu72Y28

For two differently prepared disordered samples of ${\mathrm{Cu}}_{72}$ ${\mathrm{Y}}_{28}$ we have measured the temperature dependence of the electrical resistance, ρ(T), in the region 1–25 K and the low-field magnetoresistance, ρ(B), at a few different temperatures up to 13 K in fields below 1.8 T. The inelastic scattering time, ${\tau }_i$, is determined for both samples from ρ(T) as well as from ρ(B). These different estimates agree satisfactorily, within an order of magnitude in the worst case at 1 K. The temperature dependence of ${\tau }_i$ is found to be strong with an average exponent of -3 to -4 in the temperature range up to 20 K.