Millimetre-wave InGaAs/InP heterojunction bipolar phototransistors
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
InGaAs/InP heterojunction phototransistors are described which have a dc gain of several thousand and a frequency response that shows higher output power than optimised photodiodes at 40 GHz. This is accomplished as a result of the two-terminal, edge-coupled design approach, which allows small area devices to be fabricated with low parasitics and efficient optical access.Keywords
This publication has 3 references indexed in Scilit:
- Optically-biased, edge-coupled InP/InGaAs heterojunction phototransistorsElectronics Letters, 1993
- 50 GHz InGaAs edge-coupled pin photodetectorElectronics Letters, 1991
- Planar-junction, top-illuminated GainAs/InP pin photodiode with bandwidth of 25 GHzElectronics Letters, 1989