Photoemission study of porous silicon
- 5 October 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (14) , 1655-1657
- https://doi.org/10.1063/1.108442
Abstract
We report x‐ray photoelectron spectra from a porous silicon film (PSF) with a photoluminescence peak at 1.8 eV, as a function of argon ion etching time to probe the composition in the surface and the subsurface regions. The results clearly indicate that the surface layer is essentially a fluorine admixed SiO2 phase, while the Si:O:F composition of the subsurface region 2:1:0.2. With the possibility of the existence of hydrogen in this composition it appears that beyond the highly oxidized surface, PSF is a fluorine substituted siloxene derivative, which can be responsible for the visible photoluminescence.Keywords
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