p-Type doping of diamond films with a novel organoboron source
- 1 May 1993
- journal article
- surfaces and-multilayers
- Published by Springer Nature in Applied Physics A
- Vol. 56 (5) , 425-428
- https://doi.org/10.1007/bf00332575
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Graphitization of Diamond Films Induced by Ion ImplantationPhysica Status Solidi (a), 1992
- Properties of Boron-Doped Epitaxial Diamond FilmsJapanese Journal of Applied Physics, 1990
- High temperature Schottky diodes with boron-doped homoepitaxial diamond baseMaterials Research Bulletin, 1990
- Doping of diamond by coimplantation of carbon and boronApplied Physics Letters, 1989
- Electrical Contacts to Polycrystalline B Doped Diamond FilmsMRS Proceedings, 1989
- Synthesis of Diamond Thin Films Having Semiconductive PropertiesJapanese Journal of Applied Physics, 1988
- Volume expansion of diamond during ion implantationPhysical Review B, 1986
- Characterization of conducting diamond filmsVacuum, 1986
- Vapor growth of diamond on diamond and other surfacesJournal of Crystal Growth, 1981
- The nature of the acceptor centre in semiconducting diamondJournal of Physics C: Solid State Physics, 1971