A high-performance W-band integrated source module using GaAs monolithic circuits
- 1 July 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 4 (7) , 241-243
- https://doi.org/10.1109/75.298253
Abstract
A high-performance integrated source module using a U-band MMIC HBT DRO and a U-hand MMIC MESFET power amplifier in conjunction with a W-band MMIC high-efficiency varactor doubler has been developed for millimeter-wave system applications. This paper describes the development and performance of this W-hand integrated source module. Measured results of the complete integrated source module show an output power of 10.6 dBm at 92.6 GHz and less than -126 dBc/Hz phase noise at 5 MHz offset from the carrier. These results represent the highest reported power and phase noise achieved at W-band using HBT, MESFET, and varactor frequency-doubling technologies.Keywords
This publication has 7 references indexed in Scilit:
- Dielectric Resonator Oscillators Using GaAs/(Ga,A1)As Heterojunction Bipolar TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A Unified Design of Dielectric Resonator Oscillators for Telecommunication SystemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A 0.6-watt U-band monolithic MESFET power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Rigorous analysis and design of a high-performance 94 GHz MMIC doublerIEEE Transactions on Microwave Theory and Techniques, 1993
- U-band monolithic millimetre-wave GaAs MESFET power amplifierElectronics Letters, 1992
- 25 GHz dielectric resonator oscillator using an AlGaAs/GaAs HBTElectronics Letters, 1990
- Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated CircuitsIEEE Transactions on Microwave Theory and Techniques, 1987