Comparison of EBIC and DLTS Measurements on Boron-Doped CZ Silicon Contaminated with Iron
- 16 August 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 96 (2) , K133-K137
- https://doi.org/10.1002/pssa.2210960247
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Determination of Semiconductor Parameters and of the Vertical Structure of Devices by Numerical Analysis of Energy-Dependent EBIC MeasurementsPhysica Status Solidi (a), 1983
- Dotierungseigenschaften von Eisen in SiliziumPhysica Status Solidi (a), 1981
- Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriersJournal of Applied Physics, 1978