Determination of Semiconductor Parameters and of the Vertical Structure of Devices by Numerical Analysis of Energy-Dependent EBIC Measurements
- 16 May 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 77 (1) , 139-151
- https://doi.org/10.1002/pssa.2210770117
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- On the sensitivity of the EBIC technique as applied to defect investigations in siliconPhysica Status Solidi (a), 1981
- Investigation of minority-carrier diffusion lengths by means of the scanning electron microprobe (SEM)Physica Status Solidi (a), 1981
- On the interaction between crystal defects and impurities in silicon investigated by electron microscopic methodsPhysica Status Solidi (a), 1980
- The electrical recombination efficiency of individual edge dislocations and stacking fault defects in n-type siliconPhysica Status Solidi (a), 1979
- Combined scanning (EBIC) and transmission electron microscopic investigations of dislocations in semiconductorsPhysica Status Solidi (a), 1979
- Theory of diffusion constant-, lifetime- and surface recombination velocity-measurements with the scanning electron microscopeSolid-State Electronics, 1978
- Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriersJournal of Applied Physics, 1978
- Electrical Activity of Epitaxial Stacking FaultsJournal of the Electrochemical Society, 1977
- Theory of life time measurements with the scanning electron microscope: Steady stateSolid-State Electronics, 1976
- Measurement of spatial variations of the carrier lifetime in silicon power devicesPhysica Status Solidi (a), 1972