Improvement of the photovoltaic efficiency of a metal-insulator-semiconductor structure: Influence of interface states
- 1 July 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (7) , 3060-3064
- https://doi.org/10.1063/1.324074
Abstract
We study the working of a photovoltaic MIS structure. We point out the important influence of the insulating layer and of the interface states on the improvement of the photovoltaic yield; both their kinetic and electrostatic actions are examined. Our study shows that there exists an optimum thickness δopt of the insulating layer which provides a maximum electrical power at the output of the device. We give general basic equations for the calculation of δopt and present some results concerning silicon.This publication has 8 references indexed in Scilit:
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