Carrier dynamics in (GaAs)m(AlAs)n superlattices
- 31 December 1989
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 5 (2) , 197-200
- https://doi.org/10.1016/0749-6036(89)90283-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Study on decrease in lasing threshold current of GaAs/AlGaAs single quantum-well lasers through introduction of superlattice waveguide layersJournal of Applied Physics, 1988
- Influence of transport properties on the excitation spectra of GaAs/AlxGa1-xAs superlattices and bulk layersSemiconductor Science and Technology, 1988
- Optical properties and band structure of short-period GaAs/AlAs superlatticesJournal of Luminescence, 1987
- Γ-X mixing in GaAs/As and As/AlAs superlatticesPhysical Review B, 1987
- Localized indirect excitons in a short-period GaAs/AlAs superlatticePhysical Review B, 1987
- Bloch transport of electrons and holes in superlattice minibands: Direct measurement by subpicosecond luminescence spectroscopyPhysical Review Letters, 1987
- Effects of the layer thickness on the electronic character in GaAs-AlAs superlatticesApplied Physics Letters, 1987
- Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlatticesPhysical Review B, 1987
- Electronic subbands for AlxGa1−xAs/GaAs multilayer and superlattice structuresJournal of Applied Physics, 1987
- Vertical transport in GaAs/Ga1-xAlxAs superlattices observed by photoluminescenceSolid State Communications, 1985