AlGaN/GaN HEMTs on SiC operating at 40 GHz
- 1 January 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The operation of AlGaN/GaN HEMTs on SiC in the Ka-band is analyzed with respect to the achievable output power between 35 GHz and 40 GHz. 150 nm gate length AlGaN/GaN HEMTs are investigated by active load-pull measurements. Further, small-signal and noise analysis are performed with regard to the use at Ka-band and robust receiver applicationsKeywords
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