P-type delta doping in silicon MBE

This publication has 9 references indexed in Scilit:

• Infrared resonance excitation of δ-layers-a silicon-based infrared quantum-well detector
  Thin Solid Films, 1990
• Electrical characterization and subband structures in antimony δ-doped molecular beam epitaxy-silicon layers
  Thin Solid Films, 1989
• Delta‐Doped MESFET with MBE‐Grown Si
  Journal of the Electrochemical Society, 1989
• Classical calculations of CV profiles for atomic layer doping structures in silicon
  IEEE Transactions on Electron Devices, 1989
• Advances in electrical properties of plasma-grown oxides of silicon
  Electronics Letters, 1987
• Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers
  Semiconductor Science and Technology, 1986
• Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy
  Japanese Journal of Applied Physics, 1986
• Doping of silicon in molecular beam epitaxy systems by solid phase epitaxy
  Applied Physics Letters, 1984
• Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
  IEEE Transactions on Electron Devices, 1983