Doping of silicon in molecular beam epitaxy systems by solid phase epitaxy

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Abstract
Doped Si films were deposited by controlled coevaporation or Ga( p) of Sb(n) and Si at room temperature on an atomically clean Si substrate in ultrahigh vacuum. The amorphous films were then crystallized at 230 Å/min by heating the substrate to 575 °C. Good crystal quality results, judged by Rutherford backscattering and transmission electron microscopy. Advantages over normal evaporative doping during molecular beam epitaxial growth at ∼750 °C include (1) unity sticking coefficient of the dopant, (2) no smearing or carry-over of the dopant, (3) better mobility (bulk values for n or p∼1018 cm−3), and (4) higher doping levels (>8×1018 cm−3 for Ga, 8×1019 cm−3 for Sb).