Anomalous inductive effect in selenium Schottky diodes
- 19 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (12) , 1104-1106
- https://doi.org/10.1063/1.102581
Abstract
A region of anomalous negative capacitance has been observed with forward bias in Se‐Tl Schottky evaporated layer structures. The effect, which is more prevalent in diodes with lower series resistance, is due to an inductive contribution to the impedance that is believed to arise from high‐level injection of minority electrons into the bulk selenium.Keywords
This publication has 8 references indexed in Scilit:
- Anomalous capacitance in selenium Schottky diodesJournal of Applied Physics, 1989
- STABILITY OFSe-TlSCHOTTKY JUNCTIONSPhosphorus and Sulfur and the Related Elements, 1988
- Anomalous behaviour in the capacitance of selenium Schottky diodesCanadian Journal of Physics, 1988
- Origin of the Excess Capacitance at Intimate Schottky ContactsPhysical Review Letters, 1988
- Nontrap capacitance dispersion in Se-Schottky diodesJournal of Applied Physics, 1987
- Relation between barrier height and work function in contacts to seleniumJournal of Applied Physics, 1985
- Minority carrier effects upon the small signal and steady-state properties of Schottky diodesSolid-State Electronics, 1973
- Impedance of Bulk Semiconductor in Junction DiodeJournal of the Physics Society Japan, 1957