Nontrap capacitance dispersion in Se-Schottky diodes
- 1 August 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (3) , 917-921
- https://doi.org/10.1063/1.339700
Abstract
In Schottky diodes fabricated by evaporating thallium on a layer of crystallized selenium, incremental capacitance and resistance, measured at zero bias, were found to decrease considerably with frequency over the range 100 Hz to 3 MHz. This variation is interpreted in terms of series resistance of the contacts and a layer in the selenium, some 0.4 μm in thickness, near the junction which is depopulated of acceptors.This publication has 7 references indexed in Scilit:
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