Reverse characteristics of rectifying TeSeCd structures
- 31 July 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (7) , 643-648
- https://doi.org/10.1016/0038-1101(81)90193-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- A study of the deep carrier traps in a Te-Se-Cd rectifying structureJournal of Applied Physics, 1980
- Extent of CdSe presence at ‘formed’ Se–Cd contactsPhilosophical Magazine Part B, 1980
- Electrical forming action in Te-Se-Cd structuresIEEE Transactions on Electron Devices, 1980
- Selenium films epitaxially grown on tellurium substratesJournal of Electronic Materials, 1976
- Ionization coefficient for holes in polycrystalline seleniumPhysica Status Solidi (a), 1971
- Crystalline Morphology and Electrical Properties of Selenium Epitaxilly Grown on TelluriumJapanese Journal of Applied Physics, 1970
- RECTIFYING Te–Se–Cd STRUCTURES USING A SELENIUM SINGLE-CRYSTAL FILMApplied Physics Letters, 1968
- Effects of deep impurities on n+p junction reverse-biased small-signal capacitanceSolid-State Electronics, 1968